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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11728220 B1

PDFFull Text
Date of Patent:
Aug. 15, 2023

Filed:

Oct. 26, 2021

Integrated circuit devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang-Gn Yun, Hwaseong-si, KR;

Jae-Duk Lee, Seongnam-si, KR;

Jai-Hyuk Song, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); G11C 5/06 (2006.01); H01L 23/522 (2006.01); H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/30 (2023.01); H10B 43/35 (2023.01); H01L 21/8232 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); G11C 5/063 (2013.01); H01L 21/8221 (2013.01); H01L 21/8232 (2013.01); H01L 21/823487 (2013.01); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02); H10B 43/35 (2023.02);
Abstract

Integrated circuit devices may include a plurality of word line structures and a plurality of insulating films that are stacked alternately. Sides of the plurality of word line structures and the plurality of insulating films define a side of a channel hole extending through the plurality of word line structures and the plurality of insulating films. The devices may also include a blocking dielectric film on the side of the channel hole, and a plurality of charge storage films on the blocking dielectric film and on the sides of the plurality of word line structures, respectively. Each of the plurality of charge storage films may include a first charge storage film and a second charge storage film sequentially stacked on a respective one of the sides of the plurality of word line structures. A surface of the second charge storage film may include a recess in a middle portion thereof.

Find Patent Forward Citations

Yun, Jang-Gn. (2023). Integrated circuit devices and methods of manufacturing the same (U.S. Patent No. 11728220). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11728220

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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