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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Jang-Gn Yun

USPTO Granted Patents = 48 

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 196(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2016 - 2017)
  • Hwaseong-si, KR (2013 - 2024)

Company Filing History:

goldMedal47 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 2 
 
Amsung Electronics Co., Ltd.
 patents

Years Active: 2013-2025

where 'Filed Patents' based on already Granted Patents

48 patents (USPTO):
1. 12334157 - Integrated circuit device (2025-06-17),
2. RE50137 - Vertical memory devices and methods of manufacturing the same (2024-09-17),
3. 12022653 - Semiconductor devices and methods for forming the same (2024-06-25),
4. 11817387 - Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level (2023-11-14),
5. 11776631 - Integrated circuit device (2023-10-03),
6. 11728220 - Integrated circuit devices and methods of manufacturing the same (2023-08-15),
7. 11342263 - Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level (2022-05-24),
8. 11205663 - Vertical memory devices and methods of manufacturing the same (2021-12-21),
9. 11189632 - Integrated circuit devices and methods of manufacturing the same (2021-11-30),
10. 11127679 - Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level (2021-09-21),
11. 11074981 - Integrated circuit device (2021-07-27),
12. 11011543 - Semiconductor devices (2021-05-18),
13. 10910398 - Semiconductor devices and methods for forming the same (2021-02-02),
14. 10892272 - Semiconductor memory devices including a stress relief region (2021-01-12),
15. 10872901 - Integrated circuit device and method of manufacturing the same (2020-12-22),

Title: The Innovative Contributions of Jang-Gn Yun

Introduction

Jang-Gn Yun, hailing from Hwaseong-si, South Korea, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 47 patents, he has been at the forefront of innovation, contributing to advancements that have shaped the industry.

Latest Patents

Among his latest inventions, Jang-Gn Yun has developed a vertical memory device that includes intricate features such as a channel, a dummy channel, gate electrodes, and a support pattern. This innovative design enables improved memory capabilities by allowing the channel to extend perpendicularly to the substrate's upper surface. Additionally, he has patented a semiconductor device that encompasses a cell gate conductive pattern and a complex arrangement of peripheral contact structures, enhancing the efficiency and performance of semiconductor devices in applications.

Career Highlights

Throughout his career, Jang-Gn has worked for renowned companies, including Samsung Electronics Co., Ltd. and Amsung Electronics Co., Ltd. His experience in these leading tech firms has allowed him to develop his skills and push the boundaries of semiconductor and memory technologies.

Collaborations

Collaborative efforts have played a crucial role in Yun's success. He has worked alongside talented individuals such as Joon-Sung Lim and Jaesun Yun. This synergy has led to innovative ideas and advancements in their respective fields.

Conclusion

Jang-Gn Yun’s contributions to technology and innovation are evident through his numerous patents and impactful work in the semiconductor industry. His latest inventions showcase his commitment to enhancing memory devices and semiconductor efficiency, solidifying his reputation as a key inventor in today's technological landscape.

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