The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Feb. 28, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang-gn Yun, Hwaseong-si, KR;

Jae-duk Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 27/11565 (2017.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/7682 (2013.01); H01L 21/76877 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract

An integrated circuit device includes word line structures, insulating structures, a channel hole, and charge trap patterns. The word line structures and the insulating structures are interleaved with each other and extend in a horizontal direction parallel to a main surface of a substrate, and overlap one another in a vertical direction. The channel hole passes through the word line structures and the insulating structures in the vertical direction. The charge trap patterns are located in the channel hole, and are spaced apart from one another in the vertical direction with a local insulating region therebetween.


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