The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Sep. 11, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jang-Gn Yun, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical memory device includes conductive lines on a substrate, first and second semiconductor patterns, first and second pads, first and second electrodes, a third electrode, and a first division pattern. The conductive lines are stacked in a vertical direction and extend in a first direction. The first and second semiconductor patterns extend through the conductive lines in the vertical direction. The first and second pads are formed on the first and second semiconductor patterns. The first and second electrodes are electrically connected to the first and second pads. The third electrode is electrically connected to a first conductive line of the conductive lines. The first division pattern extends in a second direction, and extends through and divides the first conductive line. In a plan view, the first and second semiconductor patterns and the first conductive line are disposed at one side of the first division pattern.