The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Aug. 14, 2006
Applicants:
Woon-kyung Lee, Gyeonggi-do, KR;
Jeong-hyuk Choi, Gyeonggi-do, KR;
Jai-hyuk Song, Seoul-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Non-volatile memory devices include memory cells therein with reduced cell-to-cell coupling capacitance. These memory cells include floating gate electrodes with open-ended wraparound shapes that operate to reduce the cell-to-cell coupling capacitance in a bit line direction, while still maintaining a high coupling ratio between control and floating gate electrodes within each memory cell.
Lee, Woon-Kyung. (2010). Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same (U.S. Patent No. 7683422). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7683422
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