The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

Jan. 20, 2009
Applicants:

Sung-won Yun, Gyeonggi-do, KR;

Seung-hyun Moon, Seoul, KR;

Jong-sun Sel, Daegu, KR;

Yoo-cheol Shin, Gyeonggi-do, KR;

Ki-hwan Choi, Gyeonggi-do, KR;

Jae-sung Sim, Gyeonggi-do, KR;

Inventors:

Sung-Won Yun, Gyeonggi-do, KR;

Seung-Hyun Moon, Seoul, KR;

Jong-Sun Sel, Daegu, KR;

Yoo-Cheol Shin, Gyeonggi-do, KR;

Ki-Hwan Choi, Gyeonggi-do, KR;

Jae-Sung Sim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Operation methods of charge-trap flash memory devices having an unused memory cell for data storage and a normal memory cell used for data storage are discussed. The operation method may include selecting the unused memory cell, and programming the unused memory cell to have a predetermined threshold voltage. The charge-trap flash memory device may thus be provided with improved reliability by interrupting erasure stress to unused memory cells.


Find Patent Forward Citations

Loading…