The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Dec. 19, 2008
Ki-tae Park, Gyeonggi-do, KR;
Jung-dal Choi, Gyeonggi-do, KR;
Jong-sun Sel, Gyeonggi-do, KR;
Yoo-cheol Shin, Gyeonggi-do, KR;
Ki-Tae Park, Gyeonggi-do, KR;
Jung-Dal Choi, Gyeonggi-do, KR;
Jong-Sun Sel, Gyeonggi-do, KR;
Yoo-Cheol Shin, Gyeonggi-do, KR;
Abstract
A NAND flash memory device includes a control circuit configured to apply, during a program operation, a first word line voltage to non-selected ones of a plurality of serially-connected memory cells, a second word line voltage greater than the first word line voltage to a selected one of the plurality of memory cells, and a third word line voltage lower than the first word line voltage to a dummy memory cell connected in series with the plurality of memory cells. In other embodiments, a control circuit is configured to program a dummy memory cell before and/or after each erase operation on a plurality of memory cells connected in series therewith. In still other embodiments, a control circuit is configured to forego erasure of a dummy memory cell while erasing a plurality of memory cells connected in series therewith.