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Yin-Pin Wang

USPTO Granted Patents = 15 (Patent Applications = 1)

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 133(Granted Patents)

Location History:

Koshing, TW (2003)
Kaohsiung, TW (2001 - 2024)

Company Filing History:

14 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 1,093

Vanguard International Semiconductor Corporation

patents

Years Active: 2001-2025

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12349432 - Enlarged backside contact (2025-07-01),

2. 12068392 - FinFET fabrication methods (2024-08-20),

3. 11276766 - FinFET fabrication methods (2022-03-15),

4. 10468500 - FinFET fabrication methods (2019-11-05),

5. 9466716 - Dual-SiGe epitaxy for MOS devices (2016-10-11),

6. 7750338 - Dual-SiGe epitaxy for MOS devices (2010-07-06),

7. 7453121 - Body contact formation in partially depleted silicon on insulator device (2008-11-18),

8. 7449753 - Write margin improvement for SRAM cells with SiGe stressors (2008-11-11),

9. 7253062 - Semiconductor device with asymmetric pocket implants (2007-08-07),

10. 7129547 - Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region (2006-10-31),

11. 7009248 - Semiconductor device with asymmetric pocket implants (2006-03-07),

12. 6960512 - Method for manufacturing a semiconductor device having an improved disposable spacer (2005-11-01),

13. 6902980 - Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region (2005-06-07),

14. 6656845 - Method for forming semiconductor substrate with convex shaped active region (2003-12-02),

15. 6277709 - Method of forming shallow trench isolation structure (2001-08-21),

Title: Innovations of Yin-Pin Wang

Introduction

Yin-Pin Wang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on advanced fabrication methods and innovative techniques that enhance the performance of electronic devices.

Latest Patents

One of his latest patents is titled "Enlarged Backside Contact." This method involves a series of processes, including etching and deposition, to create a conductive plug within a substrate. Another notable patent is related to "FinFET Fabrication Methods." This invention provides a method and structure for doping source and drain regions of PMOS and NMOS FinFET devices, enhancing their efficiency and performance.

Career Highlights

Yin-Pin Wang has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Vanguard International Semiconductor Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor fabrication.

Collaborations

Throughout his career, Yin-Pin Wang has collaborated with notable colleagues, including Chun Hsiung Tsai and Cheng-Yi Peng. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

Yin-Pin Wang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.

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