The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Feb. 15, 2002
Hsin Yi Lee, Hsin-Chu, TW;
Yin-Pin Wang, Koshing, TW;
Taiwan SEmiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for fabricating a semiconductor substrate while employing formed thereover a mask layer there is first employed the mask layer as an etch mask layer for forming a pair of isolation trenches within the semiconductor substrate and then laterally etched the mask layer prior to employing the laterally etched mask layer as an oxidation mask layer. By laterally etching the mask layer, there is formed within the semiconductor substrate a continuously curved convex elevated region as an active region of the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile