The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Dec. 22, 2003
Applicants:
Shui-ming Cheng, Chu-pei, TW;
Ka-hing Fung, Hsin-chu, TW;
Yin-pin Wang, Kaohsiung, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An SOI device () has a gate electrode with one or more additional gate regions (), and oxygen or halogen ions () under the additional gate regions (). The oxygen or halogen ions () form thicker gate oxide regions or shallow trench isolation regions.