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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yi-Tang Lin

USPTO Granted Patents = 64 

Average Co-Inventor Count = 3.7

ph-index = 11

Forward Citations = 1,548(Granted Patents)

Forward Citations (Not Self Cited) = 1,533(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal62 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 690 
 
Mosaid Technologies Corporation
 patents

Years Active: 2013-2025

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Areas of Expertise:
FinFETs
Multi-Layer Semiconductor Structures
Semiconductor Device Manufacturing
Inter-Level Connection
STI Regions
CMOS Circuits
Transistor Design
Dopant Activation
Fin-Like BJT
Selective Fin-Shaping
Integrated Circuits
Line End Extensions
64 patents (USPTO):Explore Patents
1. 12218239 - Structure and method for providing line end extensions for fin-type active regions (2025-02-04),
2. 12087777 - Systems and methods for a semiconductor structure having multiple semiconductor-device layers (2024-09-10),
3. 11784183 - Inter-level connection for multi-layer structures (2023-10-10),
4. 11721761 - Structure and method for providing line end extensions for fin-type active regions (2023-08-08),
5. 11532612 - Inter-level connection for multi-layer structures (2022-12-20),
6. 11450661 - Forming STI regions to separate semiconductor Fins (2022-09-20),
7. 11239365 - Structure and method for providing line end extensions for fin-type active regions (2022-02-01),
8. 11233140 - Semiconductor device and manufacturing method thereof (2022-01-25),
9. 10916469 - Systems and methods for a semiconductor structure having multiple semiconductor-device layers (2021-02-09),
10. 10879235 - Inter-level connection for multi-layer structures (2020-12-29),
11. 10734411 - Systems and methods for a semiconductor structure having multiple semiconductor-device layers (2020-08-04),
12. 10573751 - Structure and method for providing line end extensions for fin-type active regions (2020-02-25),
13. 10515846 - Systems and methods for a semiconductor structure having multiple semiconductor-device layers (2019-12-24),
14. 10163897 - Inter-level connection for multi-layer structures (2018-12-25),
15. 10157914 - Multi-layer semiconductor device structure (2018-12-18),

Title: The Innovative Journey of Inventor Yi-Tang Lin

Introduction: Yi-Tang Lin, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Lin's latest patents showcase his ingenuity and forward-thinking approach to innovation, with a focus on cutting-edge technologies in the semiconductor industry and beyond.

Career Highlights: Throughout his illustrious career, Lin has been at the forefront of technological advancements, leading research and development efforts that have shaped the landscape of modern innovation. His work has not only revolutionized the way we approach technology but has also set new standards for excellence in the field.

Collaborations: Lin's collaborative spirit has been instrumental in his success, as he has worked closely with leading industry experts, research institutions, and universities to bring his inventions to life. His ability to foster strong partnerships and leverage collective expertise has been a key driver of his innovative endeavors.

Conclusion: In conclusion, Yi-Tang Lin stands as a beacon of innovation, inspiring the next generation of inventors to push the boundaries of what is possible. His relentless pursuit of excellence and unwavering dedication to advancing technology make him a true trailblazer in the world of inventions.

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