The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jan. 10, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yasutoshi Okuno, Hsinchu, TW;

Yi-Tang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 23/544 (2006.01); H01L 27/12 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01); H01L 27/092 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); G03F 7/70633 (2013.01); G03F 9/708 (2013.01); G03F 9/7073 (2013.01); H01L 21/8234 (2013.01); H01L 23/544 (2013.01); H01L 27/092 (2013.01); H01L 27/1207 (2013.01); H01L 29/16 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract

One embodiment of the instant disclosure provides a semiconductor structure that comprises: a first device layer including a first active layer disposed over a substrate and a first gate layer disposed on the active layer, where at least one of the first active layer and the first gate layer includes a first layer alignment structure; a first bounding layer disposed over the first device layer, the first bounding layer including an opening arranged to detectably expose the first layer alignment structure; and a second device layer disposed over the bounding layer including a second layer alignment structure, where the second layer alignment structure is substantially aligned to the first layer alignment structure through the opening.


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