Kanagawa, Japan

Yasukazu Seki

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Fuji Electric Co., Ltd., Fuji Electric Corporate Research & Development Co., Ltd., Fuji Electric Corporate Research and Developement Ltd.. Active years: 1986-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasukazu Seki. Retrieved from https://idiyas.com/inventor/yasukazu-seki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 95.7

Average Co-Inventor Count = 1.9

ph-index = 10

Forward Citations = 291(Granted Patents)


Location History:

  • Tokyo, JP (1986 - 1987)
  • Yokosuka, JP (1987 - 1990)
  • Kawasaki, JP (1990 - 1994)
  • Kanagawa, JP (1986 - 1998)
  • Nagano, JP (2017)
  • Matsumoto, JP (2017 - 2018)

Company Filing History:


Years Active: 1986-2018

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Areas of Expertise:
Semiconductor Device
Voltage Resistant Structure
Silicon Carbide
Schottky Diode
MOSFET
Radiation Detector
Doping Technology
High-Frequency Scanning
Insulated Gate
Crystalline Films
Protective Film
Impurity Diffusion
23 patents (USPTO):Explore Patents

Title: The Innovations of Yasukazu Seki

Introduction

Yasukazu Seki, an accomplished inventor based in Kanagawa, Japan, has made significant contributions to the semiconductor industry, holding a remarkable total of 23 patents. His groundbreaking inventions focus primarily on the development of advanced semiconductor devices, enhancing their performance and efficiency.

Latest Patents

Among his most recent patents, Seki has introduced a manufacturing method for a semiconductor device featuring a voltage-resistant structure. This innovative device consists of a semiconductor substrate and a semiconductor layer, with electrodes positioned above and below the substrate. Notably, the extension section of the device may possess a lower permittivity compared to the substrate, potentially improving its operational capabilities.

Another notable patent involves the manufacturing of silicon carbide semiconductor devices using laser doping technology. This method efficiently creates an electric field control region while mitigating the challenges of concentration control when implanting p-type impurities. By employing this technique, Seki's approach allows for the production of SiC semiconductor devices that can withstand high voltage while being manufactured at lower temperatures than traditional ion implantation processes.

Career Highlights

Seki has had a substantial impact on the semiconductor sector through his tenures at respected companies such as Fuji Electric Co., Ltd. and Fuji Electric Corporate Research & Development, Ltd. His work has significantly advanced semiconductor technology, earning him recognition within the industry.

Collaborations

Throughout his career, Yasukazu Seki has collaborated with distinguished colleagues including Noritada Sato and Koh Yoshikawa. These partnerships have likely fostered a creative environment conducive to innovation, resulting in numerous advancements in semiconductor technology.

Conclusion

In conclusion, Yasukazu Seki's contributions to the field of semiconductors through his 23 patents highlight his ingenuity and dedication. His innovative approaches to enhancing semiconductor devices not only reflect his expertise but also pave the way for future advancements in the industry. As the demand for more efficient and robust semiconductor solutions continues to rise, Seki's work remains pivotal.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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