The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
May. 28, 1993
Applicant:
Inventor:
Yasukazu Seki, Kawasaki, JP;
Assignee:
Fuji Electric Co., Ltd., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257133 ; 257132 ; 257146 ; 257154 ; 257162 ; 257167 ; 257169 ; 257170 ; 257378 ; 257380 ;
Abstract
A channel in which electron current is supplied from n.sup.+ type source layer to an n.sup.- type base layer is formed in a thyristor portion by using a first gate electrode to have an electrical connection in a thyristor state. Injection of hole current to a p type base layer, which is necessary to maintain the thyristor state is extracted to a source terminal by a control MOSFET portion including a second gate electrode a turn-off time and the state of this device is changed to the transistor state similar to that in the IGBT so that a short switching time turn-off is realized.