The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
Apr. 18, 1989
Applicant:
Inventor:
Yasukazu Seki, Kawasaki, JP;
Assignee:
Fuji Electric Co., Ltd., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 2313 ; 357 42 ; 357 43 ; 357 59 ;
Abstract
A conductivity modulated MOSFET is composed of a MOSFET formed according to SOI technique utilizing two polycrystalline silicon layers deposited on a semiconductor substrate through an oxide film, and a vertical bipolar transistor formed within the semiconductor substrate. Therefore, electrons and positive holes pass through different passages respectively, and any parasitic thyristor is not formed as in the conventional conductivity modulated MOSFET with a MOSFET built in the semiconductor substrate, and thus there is no possibility of causing the latch up phenomenon.