The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1996
Filed:
Mar. 02, 1995
Applicant:
Inventor:
Yasukazu Seki, Kanagawa, JP;
Assignee:
Fuji Electric Co., Ltd., Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257213 ; 257258 ; 257327 ; 257368 ; 257378 ;
Abstract
A conductivity-modulated-type MOSFET. A base layer is on a drain layer, and a first semiconductor region, having the opposite conductivity-type as the base layer, is in the base layer. An insulation layer is on the portion of the first semiconductor region, and a gate is on the insulation layer. A second semiconductor region, having the same conductivity type as the base layer is in the second semiconductor layer at a periphery of the MOSFET.