The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Sep. 01, 2017
Fuji Electric Co., Ltd., Kanagawa, JP;
Octec, Inc., Tokyo, JP;
Koh Yoshikawa, Matsumoto, JP;
Haruo Nakazawa, Matsumoto, JP;
Kenichi Iguchi, Matsumoto, JP;
Yasukazu Seki, Matsumoto, JP;
Katsuya Okumura, Tokyo, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Octec, Inc., Tokyo, JP;
Abstract
A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a semiconductor layer on the semiconductor substrate, a front surface electrode above the semiconductor layer, a rear surface electrode below the semiconductor substrate, an extension section provided to a side surface of the semiconductor substrate, and a resistance section electrically connected to the front surface electrode and the rear surface electrode. The extension section may have a lower permittivity than the semiconductor substrate. The resistance section may be provided to at least one of the upper surface and the side surface of the extension section.