Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Abstract

When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a laser in a region where the control of the concentration in the SiC substrate is not necessary almost at all. A SiC semiconductor device having withstanding high voltage is manufactured at a lower temperature process compared to ion implantation process. A method of manufacturing a silicon carbide semiconductor device includes forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate; forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology; forming a Schottky electrode in contact with the drift layer; and forming, on the other main surface of the silicon carbide substrate, a cathode electrode.