The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Feb. 24, 2016
Kyushu University, National University Corporation, Fukuoka, JP;
Fuji Electric Co., Ltd., Kawasaki, JP;
Akihiro Ikeda, Fukuoka, JP;
Hiroshi Ikenoue, Fukuoka, JP;
Tanemasa Asano, Fukuoka, JP;
Kenichi Iguchi, Nagano, JP;
Haruo Nakazawa, Nagano, JP;
Koh Yoshikawa, Nagano, JP;
Yasukazu Seki, Nagano, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, Fukuoka, JP;
Abstract
Impurity elements are doped at a high concentration exceeding a thermodynamic equilibrium concentration into a solid material having an extremely small diffusion coefficient of the impurity element. A method for doping impurities includes steps for depositing source film made of material containing impurity elements with a film thickness on a surface of a solid target object (semiconductor substrate) made from the solid material. The film thickness is determined in consideration of irradiation time per light pulse and the energy density of the light pulse. The method also includes a step for irradiating the source film by the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the target object at a concentration exceeding a thermodynamic equilibrium concentration.