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For the Inventor, By the Inventor

San Diego, CA, United States of America

Yan Sun

This inventor holds 7 USPTO granted patents and 25 published patent applications. Top assignee: Qualcomm Incorporated. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yan Sun. Retrieved from https://idiyas.com/inventor/yan-sun-udq7ns0k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

Average Co-Inventor Count = 2.6

ph-index = 1


Company Filing History:

goldMedal7 out of 45,176 
 
Qualcomm Incorporated
 patents

Years Active: 2026

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7 patents (USPTO):Explore Patents
1. 12772821 - Memory cell structures using full backside connectivity (2026-10-20),
2. 12772487 - Gate-tie-down in backside power architecture using contact jumper and backside contact (2026-10-20),
3. 12757483 - Complementary field effect transistor (CFET) circuits with vertical routing structures (2026-10-06),
4. 12757457 - Diode structure for direct backside contact, backside power delivery network (2026-10-06),
5. 12677466 - Deeply recessed top metal gate for gate-all-around field effect transistor (2026-07-07),
6. 12628384 - Enhanced-shaped extension region(s) for gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods (2026-05-12),
7. 12628377 - Gate-all-around (GAA) field-effect transistor (FET) device having FETs with different crystalline orientation channels through a substrate (2026-05-12),
Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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