The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 19, 2023
Qualcomm Incorporated, San Diego, CA (US);
Shreesh Narasimha, Charlotte, NC (US);
Yan Sun, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Disclosed are complementary field effect transistor (CFET) circuits with vertical routing structures and methods for making the same. In an aspect, a semiconductor structure comprises a first field effect transistor (FET) of a first charge carrier type, comprising a first source/drain (S/D) region, a second S/D region, and a first gate; a second FET of a second charge carrier type, disposed above the first FET and comprising a third S/D region, a fourth S/D region, and a second gate; a frontside metal (FM) layer disposed above the second FET and comprising an FM conductor extending in an X direction; a backside metal (BM) layer disposed below the first FET and comprising a BM conductor extending in the X direction; and a vertical connector extending in the Z direction, that electrically couples the BM conductor to the FM conductor.
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