The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Sep. 18, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Deepak Sharma, San Diego, CA (US);

Yan Sun, San Diego, CA (US);

Shreesh Narasimha, Charlotte, NC (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6211 (2025.01); H10D 30/024 (2025.01); H10D 62/119 (2025.01); H10D 62/127 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01);
Abstract

Disclosed are gate-tie-down (GTD) cells that utilize a backside power delivery scheme, where metal wires that deliver power are provided on the back of the die. The backside power may be delivered to the gates through S/Ds and through frontside contacts. As a result, ultra-low height standard cell can be enabled. Also higher area scaling may be achieved. Further, performance and power gain can be maximized.


Find Patent Forward Citations

Quick Actions:

Sharma, Deepak. (2026). Gate-tie-down in backside power architecture using contact jumper and backside contact (U.S. Patent No. 12772487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772487

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