The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Feb. 22, 2024
Qualcomm Incorporated, San Diego, CA (US);
Yan Sun, San Diego, CA (US);
Shreesh Narasimha, Charlotte, NC (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
A field effect transistor (FET) structure and method for making the same is disclosed. In an aspect, a FET structure comprises a vertical metal gate disposed between a first and second source/drain (S/D) epitaxial (EPI) structure and having a set of vertically-stacked, horizontal channels connecting the first and second S/D EPI structures through the vertical metal gate, where a top-most portion of the vertical metal gate is above a top-most channel. A high-K dielectric material is disposed between the vertical metal gate and each of the horizontal channels, and vertical spacer layers separate the vertical metal gate from the S/D EPI structures. A low-K dielectric structure is disposed above the top-most portion of the vertical metal gate and fills a recess above the vertical metal gate and between the first vertical spacer layer and the second vertical spacer layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile