The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Nov. 03, 2023
Qualcomm Incorporated, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A diode structure includes a nanosheet structure on a substrate, including a first, first-type diffusion region, a second, first-type diffusion region on the substrate, a first, second-type diffusion region, and a second, second-type diffusion region, each on the substrate. The diode structure includes a first gate on the nanosheet structure between the first and second, first-type diffusion regions. The diode structure includes a first frontside zero (M0) metal layer coupled to a frontside of the first and second, first-type diffusion regions, and a first backside M0 metal layer coupled to a backside of the first and second, first-type diffusion regions to form an anode. The diode structure includes a second frontside M0 metal layer coupled to a frontside of the first and second, second-type diffusion regions, and a second backside M0 metal layer coupled to a backside of the first and second, second-type diffusion regions to form a cathode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile