Shanghai, China

Xinyun Xie

This inventor holds 14 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing (Beijing) International Corporation. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xinyun Xie. Retrieved from https://idiyas.com/inventor/xinyun-xie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.2

ph-index = 4

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2015-2021

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Areas of Expertise:
Semiconductor Device
FinFET
Fabrication Method
Transistor
Device Reliability
High-K Process
Core Device
Input/Output Device
Fin-type Device
SRAM Tuning
14 patents (USPTO):Explore Patents

Title: The Innovative Journey of Xinyun Xie: A Pioneer in Semiconductor Manufacturing

Introduction: Xinyun Xie, based in Shanghai, China, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, Xie has firmly established himself as a key player in advancing semiconductor manufacturing techniques, particularly in the development of FinFET devices.

Latest Patents: Among his latest innovations is a groundbreaking method for manufacturing semiconductor devices. This method focuses on the technical intricacies of creating FinFET devices, detailing a process that involves the pre-removal of a predetermined thickness of the first region of an isolation area. This is strategically designed on the sides of a fin that remains uncovered by a pseudo gate. The innovation ensures that when the second region of the isolation area, which is covered by the pseudo gate, is sacrificially removed, the upper surfaces of both the first and second regions are nearly leveled. This meticulous approach results in enhanced DC and AC performance of the resulting FinFET device, marking a significant improvement in semiconductor performance.

Career Highlights: Xinyun Xie's career has included pivotal roles at Semiconductor Manufacturing International Corporation, also known as SMIC, in both Shanghai and Beijing. His work in these esteemed institutions has led to numerous technological advancements in semiconductor manufacturing, positioning him as a leader in the industry.

Collaborations: Throughout his career, Xie has collaborated with various professionals, including his coworker Ming Zhou. These partnerships have fostered an environment of innovation, leading to the creation of advanced semiconductor technologies.

Conclusion: Xinyun Xie's contributions to the semiconductor industry exemplify the spirit of innovation and dedication to technological advancement. With 14 patents that reflect his expertise and commitment to improving semiconductor manufacturing methods, he continues to pave the way for future developments. His work not only enhances device performances but also inspires the next generation of engineers and inventors in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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