The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 27, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Xinyun Xie, Shanghai, CN;
Ming Zhou, Shanghai, CN;
Abstract
A method of forming a semiconductor device includes providing a semiconductor substrate. The semiconductor substrate includes fins formed thereon and a patterned hard mask layer formed on a top surface of the fins. The method further includes: forming an isolation material layer covering the semiconductor substrate, the fins, and the patterned hard mask layer; performing planarization of the isolation material layer, stopping at the patterned hard mask layer; and performing oxygen ion implantation to form an oxygen injection region within the fins and the isolation material layer; back-etching the isolation material layer, stopping above the oxygen injection region, to form a remaining portion of the isolation material layer exposing a portion of the fins; and performing thermal annealing to cause a thermal oxidation of a portion of the fins through oxygen ions in the oxygen injection region, thereby forming an oxide layer within the plurality of fins.