The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Feb. 09, 2018
Applicants:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Xinyun Xie, Shanghai, CN;
Ming Zhou, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 21/00 (2006.01); H01L 23/367 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 27/0211 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/30608 (2013.01); H01L 23/3677 (2013.01);
Abstract
Fin-type semiconductor device is provided. The semiconductor device includes: a semiconductor substrate and an insulating layer on sidewalls of the plurality of fins. A plurality of fins is projected on a surface of the semiconductor substrate. The insulating layer is located on the surface of the semiconductor substrate. A surface of the insulating layer is lower than top surfaces of the plurality of fins. A thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.