The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Oct. 20, 2016
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Xinyun Xie, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/2822 (2013.01); H01L 21/28176 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 27/088 (2013.01); H01L 29/42364 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having a core device and an IO device. The core device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The IO device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The gate interface layer of the core device and the gate interface layer of the IO device each are doped with fluoride ions.