The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Apr. 10, 2014
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

Xinyun Xie, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 29/66803 (2013.01); H01L 21/823431 (2013.01); H01L 27/088 (2013.01);
Abstract

A semiconductor device and method of forming the same include a substrate having a plurality of memory cells formed thereon. A memory cell includes pass-gate transistors, pull-up transistors, and pull-down transistors. The pass-gate transistors and a portion of the pull-down transistors have different doping concentrations.


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