The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jul. 15, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Xinyun Xie, Shanghai, CN;
Abstract
The present disclosure provides a semiconductor fabrication method. The method includes providing a semiconductor substrate having first regions and second regions; providing a first gate structure on a first region of the semiconductor substrate, and a second gate structure on a second region of the semiconductor substrate; and forming first trenches in the first region at both sides of the first gate structure. The method further includes forming a first stress layer in the first trenches and a first bumping stress layer on the first stress layer; forming second trenches in a second region at both sides of the second gate structure; and forming a second stress layer in the second trenches and a second bumping stress layer on the second stress layer.