Cary, NC, United States of America

Woongsun Kim

This inventor holds 20 USPTO granted patents and 31 published patent applications, primarily in Power Semiconductor Devices. Top assignee: Wolfspeed, Inc.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woongsun Kim. Retrieved from https://idiyas.com/inventor/woongsun-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 75.0

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2022-2026

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Areas of Expertise:
Gate Trench
Power Semiconductor
Deep Support Shields
Trench Shielding
FinFET
Edge Termination
Conduction Enhancement
Field Oxide Layer
Dopant Shielding
Cell Pitch
On-State Resistance
Breakdown Performance
20 patents (USPTO):Explore Patents

Title: Innovations of Inventor Woongsun Kim in Semiconductor Technologies

Introduction: Woongsun Kim, a prolific inventor based in Cary, NC, has made significant contributions to the field of semiconductor technologies. With a remarkable portfolio of 11 patents, he has been instrumental in advancing innovations that enhance the functionality and reliability of semiconductor devices.

Latest Patents: Among his latest patents, one notable invention focuses on FinFET power semiconductor devices. This patent describes a power semiconductor device that incorporates a semiconductor layer structure comprising a wide bandgap semiconductor material. The design includes a drift region of a first conductivity type along with multiple fin structures that protrude from the drift region. Each fin structure has respective source regions and channel regions, promoting improved device performance.

Another prominent patent elaborates on sidewall dopant shielding methods for trenched semiconductor device structures. This invention details semiconductor devices and related methods that introduce a deep shielding pattern, improving the reliability and functioning of the device. The method explicates the formation of a wide band-gap semiconductor layer structure that includes a drift region, gate trenches, and the implanting of dopants, thus creating effective shielding patterns that enhance the device's overall efficiency.

Career Highlights: Woongsun Kim works at Wolfspeed, Inc., a leading company in the semiconductor industry, known for its cutting-edge innovations and high-performance solutions. His commitment and ingenuity in semiconductor technology have contributed to the company's reputation as a pioneer in wide bandgap power semiconductor devices.

Collaborations: Woongsun frequently collaborates with esteemed colleagues, including Daniel Jenner Lichtenwalner and Naeem Islam. This collaborative environment fosters a culture of innovation, leading to groundbreaking advancements in the semiconductor field.

Conclusion: Woongsun Kim exemplifies the spirit of innovation in the semiconductor industry. His impressive array of patents not only showcases his talent and dedication but also marks significant progress in the development of advanced semiconductor devices. As the field continues to evolve, contributions like Kim's remain essential for driving future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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