The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jan. 05, 2023
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Madankumar Sampath, Morrisville, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
Woongsun Kim, Cary, NC (US);
Naeem Islam, Morrisville, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 30/80 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/80 (2025.01); H10D 62/82 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/751 (2025.01); H10D 12/031 (2025.01); H10D 30/668 (2025.01); H10D 30/801 (2025.01); H10D 62/127 (2025.01); H10D 62/314 (2025.01); H10D 62/82 (2025.01); H10D 62/8325 (2025.01); H10D 62/80 (2025.01); H10D 62/8503 (2025.01);
Abstract
A semiconductor device includes a semiconductor layer structure having a drift region of a first conductivity type and a well region of a second conductivity type above the drift region. A gate is provided on the semiconductor layer structure adjacent the well region. A buried shielding structure of the second conductivity type is provided under the well region and separated from the well region by a portion of the drift region. Related devices and fabrication methods are also discussed.