The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Oct. 06, 2023
Wolfspeed, Inc., Durham, NC (US);
Madankumar Sampath, Morrisville, NC (US);
Woongsun Kim, Cary, NC (US);
Naeem Islam, Morrisville, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A semiconductor device comprises a silicon carbide based semiconductor layer structure and a first gate trench extending into an upper portion of the semiconductor layer structure. The semiconductor layer structure comprises a drift region having a first conductivity type, a well layer having a second conductivity type, and a support shield having the second conductivity type. A width of a first segment of the support shield that is deeper in the semiconductor layer structure than the well layer and less deep in the semiconductor layer structure than a bottom of the first gate trench decreases with increasing distance from the well region.