The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 01, 2020
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Naeem Islam, Morrisville, NC (US);
Woongsun Kim, Cary, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 29/0623 (2013.01); H01L 29/086 (2013.01); H01L 29/7825 (2013.01); H01L 29/7851 (2013.01);
Abstract
A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region. The fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region. Related devices and methods are also discussed.