Clifton Park, NY, United States of America

William James Taylor, Jr

USPTO Granted Patents = 46 (Patent Applications = 9)

Average Co-Inventor Count = 3.0

ph-index = 10

Forward Citations = 589(Granted Patents)

Location History:

Round Rock, TX (US) (2002 - 2011)
Clifton Park, NY (US) (2010 - 2024)

Company Filing History:

Freescale Semiconductor,inc.

International Business Machines Corporation

patents

5. 5 out of 927

Globalfoundries U.S. Inc.

patents

6. 2 out of 2,867

Stmicroelectronics Gmbh

patents

where one patent can have more than one assignee

Years Active: 2002-2024

where 'Filed Patents' based on already Granted Patents

46 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11934021 - Photonic devices integrated with thermally conductive layers (2024-03-19),

2. 11855074 - Electrostatic discharge devices (2023-12-26),

3. 11543604 - On-chip heater with a heating element that locally generates different amounts of heat and methods (2023-01-03),

4. 11435982 - True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in STT-MRAM (2022-09-06),

5. 11387353 - Structure providing charge controlled electronic fuse (2022-07-12),

6. 10050118 - Semiconductor device configured for avoiding electrical shorting (2018-08-14),

7. 9793171 - Buried source-drain contact for integrated circuit transistor devices and method of making same (2017-10-17),

8. 9786607 - Interconnect structure including middle of line (MOL) metal layer local interconnect on ETCH stop layer (2017-10-10),

9. 9728456 - Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer (2017-08-08),

10. 9583442 - Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer (2017-02-28),

11. 9461171 - Methods of increasing silicide to epi contact areas and the resulting devices (2016-10-04),

12. 9385201 - Buried source-drain contact for integrated circuit transistor devices and method of making same (2016-07-05),

13. 9362403 - Buried fin contact structures on FinFET semiconductor devices (2016-06-07),

14. 9362279 - Contact formation for semiconductor device (2016-06-07),

15. 9330972 - Methods of forming contact structures for semiconductor devices and the resulting devices (2016-05-03),

Title: Innovations by William James Taylor, Jr.

Introduction

William James Taylor, Jr., based in Clifton Park, NY, is a notable inventor with a remarkable portfolio of 46 patents. His contributions mainly focus on semiconductor devices utilized in optoelectronic and photonic applications. Taylor’s innovative mindset has led to advancements that significantly enhance the performance and efficiency of various technologies.

Latest Patents

Among his latest inventions is a patent for "Photonic Devices Integrated with Thermally Conductive Layers." This groundbreaking work pertains to semiconductor devices designed for optoelectronic and photonic applications, particularly emphasizing the integration of thermally conductive layers. These layers are crucial for effective heat removal from optoelectronic components, thereby improving the overall functionality of photonic devices.

Additionally, he has developed patents for "Electrostatic Discharge Devices." This patent relates to innovative semiconductor structures intended to mitigate electrostatic discharge. The design features multiple regions of a first dopant type, separated by insulator material. It includes a substrate that houses these regions, ensuring reliable performance and durability against electrostatic occurrences.

Career Highlights

William has held significant positions at prominent companies in the technology sector, including Globalfoundries Inc. and Freescale Semiconductor, Inc. His experience in these organizations has equipped him with the expertise to pioneer cutting-edge semiconductor technologies.

Collaborations

Throughout his career, Taylor has collaborated with talented individuals, including Ruilong Xie and Ryan Ryoung-Han Kim. Together, they have pushed the boundaries of innovation in the semiconductor field, contributing to advancements that are reshaping the industry.

Conclusion

William James Taylor, Jr. stands out as a driving force in the realm of semiconductor innovations. His extensive patent portfolio reflects his dedication to enhancing optoelectronic technologies and addressing challenges in the field. As he continues to build on his expertise and collaborate with fellow innovators, the future promises even greater advancements from his efforts.

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9 patents pending:

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