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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

William James Taylor, Jr

This inventor holds 46 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Freescale Semiconductor,inc., Motorola Corporation. Active years: 2002-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William James Taylor, Jr. Retrieved from https://idiyas.com/inventor/william-james-taylor-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 63.0

Average Co-Inventor Count = 3.0

ph-index = 10

Forward Citations = 591(Granted Patents)


Location History:

  • Round Rock, TX (US) (2002 - 2011)
  • Clifton Park, NY (US) (2010 - 2024)

Company Filing History:

goldMedal24 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal8 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal7 out of 20,290 
 
Motorola Corporation
 patents
4. 5 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
5. 5 out of 166,351 
 
International Business Machines Corporation
 patents
6. 2 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2002-2024

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Areas of Expertise:
Photonic Devices
Electrostatic Discharge
True Random Number Generation
Charge Controlled Fuse
Buried Source-Drain Contact
FinFET Structures
Contact Formation
Thermally Conductive Layers
Metal Silicide
Gate Structures
Dual Gate Oxide
Three-Dimensional Device
46 patents (USPTO):Explore Patents
1. 11934021 - Photonic devices integrated with thermally conductive layers (2024-03-19),
2. 11855074 - Electrostatic discharge devices (2023-12-26),
3. 11543604 - On-chip heater with a heating element that locally generates different amounts of heat and methods (2023-01-03),
4. 11435982 - True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in STT-MRAM (2022-09-06),
5. 11387353 - Structure providing charge controlled electronic fuse (2022-07-12),
6. 10050118 - Semiconductor device configured for avoiding electrical shorting (2018-08-14),
7. 9793171 - Buried source-drain contact for integrated circuit transistor devices and method of making same (2017-10-17),
8. 9786607 - Interconnect structure including middle of line (MOL) metal layer local interconnect on ETCH stop layer (2017-10-10),
9. 9728456 - Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer (2017-08-08),
10. 9583442 - Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer (2017-02-28),
11. 9461171 - Methods of increasing silicide to epi contact areas and the resulting devices (2016-10-04),
12. 9385201 - Buried source-drain contact for integrated circuit transistor devices and method of making same (2016-07-05),
13. 9362403 - Buried fin contact structures on FinFET semiconductor devices (2016-06-07),
14. 9362279 - Contact formation for semiconductor device (2016-06-07),
15. 9330972 - Methods of forming contact structures for semiconductor devices and the resulting devices (2016-05-03),

Title: Innovations by William James Taylor, Jr.

Introduction

William James Taylor, Jr., based in Clifton Park, NY, is a notable inventor with a remarkable portfolio of 46 patents. His contributions mainly focus on semiconductor devices utilized in optoelectronic and photonic applications. Taylor’s innovative mindset has led to advancements that significantly enhance the performance and efficiency of various technologies.

Latest Patents

Among his latest inventions is a patent for "Photonic Devices Integrated with Thermally Conductive Layers." This groundbreaking work pertains to semiconductor devices designed for optoelectronic and photonic applications, particularly emphasizing the integration of thermally conductive layers. These layers are crucial for effective heat removal from optoelectronic components, thereby improving the overall functionality of photonic devices.

Additionally, he has developed patents for "Electrostatic Discharge Devices." This patent relates to innovative semiconductor structures intended to mitigate electrostatic discharge. The design features multiple regions of a first dopant type, separated by insulator material. It includes a substrate that houses these regions, ensuring reliable performance and durability against electrostatic occurrences.

Career Highlights

William has held significant positions at prominent companies in the technology sector, including Globalfoundries Inc. and Freescale Semiconductor, Inc. His experience in these organizations has equipped him with the expertise to pioneer cutting-edge semiconductor technologies.

Collaborations

Throughout his career, Taylor has collaborated with talented individuals, including Ruilong Xie and Ryan Ryoung-Han Kim. Together, they have pushed the boundaries of innovation in the semiconductor field, contributing to advancements that are reshaping the industry.

Conclusion

William James Taylor, Jr. stands out as a driving force in the realm of semiconductor innovations. His extensive patent portfolio reflects his dedication to enhancing optoelectronic technologies and addressing challenges in the field. As he continues to build on his expertise and collaborate with fellow innovators, the future promises even greater advancements from his efforts.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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