The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Feb. 08, 2021
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Zhiqing Li, Halfmoon, NY (US);

William J. Taylor, Jr., Clifton Park, NY (US);

Anindya Nath, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge devices and methods of manufacture. The structure includes: a plurality of regions of a first dopant type; insulator material separating each region of the plurality of regions of the first dopant type; and a substrate contacting the plurality of regions of the first dopant type, the substrate comprising a base region of a second dopant type different than the first dopant type and an outer segment surrounding the plurality of regions of the first dopant type, the outer segment comprises an electrical resistivity higher than the second dopant type.


Find Patent Forward Citations

Loading…