Contact formation for semiconductor device

Abstract

A method of contact formation and resulting structure is disclosed. The method includes providing a starting semiconductor structure, the structure including a semiconductor substrate with fins coupled to the substrate, a bottom portion of the fins being surrounded by a first dielectric layer, dummy gates covering a portion of each of the fins, spacers and a cap for each dummy gate, and a lined trench between the gates extending to and exposing the first dielectric layer. The method further includes creating an epitaxy barrier of hard mask material between adjacent fins in the trench, creating N and P type epitaxial material on the fins adjacent opposite sides of the barrier, and creating sacrificial semiconductor epitaxy over the N and P type epitaxial material, such that subsequent removal thereof can be done selective to the N and P type of epitaxial material. The resulting structure has replacement (conductive) gates, conductive material above the N and P type epitaxy, and a contact to the conductive material for each of N and P type epitaxy.