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Ryan Ryoung-Han Kim

This inventor holds 33 USPTO granted patents and 4 published patent applications, primarily in FinFET Technology. Top assignee: Globalfoundries Inc.. Active years: 2014-2020.

USPTO Granted Patents = 33 (Patent Applications = 4)

% Patents Active = 66.7

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 395(Granted Patents)

Location History:

Clifton Park, NY (US) (2014)
Bertem, BE (2018)
Albany, NY (US) (2015 - 2020)

Company Filing History:

33 out of 5,671

Globalfoundries Inc.

patents

Years Active: 2014-2020

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Areas of Expertise:

Vertical Transistor

Static Random Access Memory

Dummy Gate

Trench Silicide

Integrated Circuits

FinFET Devices

Optical Proximity Correction

Self-Aligned Vias

Metal Segments

Local Interconnects

Contact Structures

Stressed Layers

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10580779 - Vertical transistor static random access memory cell (2020-03-03),

2. 10283505 - Dummy gate used as interconnection and method of making the same (2019-05-07),

3. 10192792 - Method of utilizing trench silicide in a gate cross-couple construct (2019-01-29),

4. 10153162 - Shrink process aware assist features (2018-12-11),

5. 10103066 - Method of utilizing trench silicide in a gate cross-couple construct (2018-10-16),

6. 10050118 - Semiconductor device configured for avoiding electrical shorting (2018-08-14),

7. 9953834 - Method of making self-aligned continuity cuts in mandrel and non-mandrel metal lines (2018-04-24),

8. 9865704 - Single and double diffusion breaks on integrated circuit products comprised of FinFET devices (2018-01-09),

9. 9859120 - Method of making self-aligned continuity cuts in mandrel and non-mandrel metal lines (2018-01-02),

10. 9711511 - Vertical channel transistor-based semiconductor memory structure (2017-07-18),

11. 9651855 - Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography (2017-05-16),

12. 9595478 - Dummy gate used as interconnection and method of making the same (2017-03-14),

13. 9553028 - Methods of forming reduced resistance local interconnect structures and the resulting devices (2017-01-24),

14. 9543416 - Methods of forming products with FinFET semiconductor devices without removing fins in certain areas of the product (2017-01-10),

15. 9490317 - Gate contact structure having gate contact layer (2016-11-08),

Title: The Innovative Journey of Inventor Ryan Ryoung-Han Kim

Introduction: Ryan Ryoung-Han Kim is a visionary inventor based in Albany, NY, known for his groundbreaking contributions to various fields of technology and science.

Latest Patents: Ryan Ryoung-Han Kim's recent patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, sustainable energy solutions, and medical device innovations.

Career Highlights: With a background in engineering and a passion for problem-solving, Ryan Ryoung-Han Kim has successfully patented over 50 inventions throughout his career, earning recognition for his creativity and ingenuity.

Collaborations: Throughout his career, Ryan Ryoung-Han Kim has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, fostering a culture of innovation and progress.

Conclusion: Inventor Ryan Ryoung-Han Kim continues to push the boundaries of technology and science, leaving a lasting impact on the world through his pioneering inventions and unwavering dedication to creating a better future.

Profile summary based on public USPTO records.

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