The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Jun. 12, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Wenhui Wang, Clifton Park, NY (US);

Ryan Ryoung-han Kim, Albany, NY (US);

Linus Jang, Clifton Park, NY (US);

Jason Cantone, Mechanicville, NY (US);

Lei Sun, Albany, NY (US);

Seowoo Nam, Gyeonggi-do, KR;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 23/528 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01);
Abstract

Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.


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