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For the Inventor, By the Inventor

Changhua, Taiwan

Wei-Hsin Liu

This inventor holds 23 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2014-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Hsin Liu. Retrieved from https://idiyas.com/inventor/wei-hsin-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Taichung, TW (2017 - 2019)
  • Changhua, TW (2019)
  • Changhua County, TW (2014 - 2021)

Company Filing History:

goldMedal23 out of 7,285 
 
United Microelectronics Corp.
 patents
silverMedal14 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2014-2021

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Areas of Expertise:
Semiconductor Structure
Memory Device
Oxide Layer
Silicon Nitride
Dynamic Random Access Memory
Gate Structure
Cobalt Silicide Film
Isolation Structure
Amorphous Silicon
Stacked Structure
Semiconductor Process
Fabrication Method
23 patents (USPTO):Explore Patents
1. 11088023 - Method of forming a semiconductor structure (2021-08-10),
2. 10903328 - Method for fabricating semiconductor device (2021-01-26),
3. 10811272 - Method of forming stacked structure of memory (2020-10-20),
4. 10672864 - Manufacturing method of semiconductor memory device (2020-06-02),
5. 10643883 - Method of forming isolation structure (2020-05-05),
6. 10535664 - Fabricating method of oxide layer within peripheral circuit region (2020-01-14),
7. 10475900 - Method for manufacturing a semiconductor device with a cobalt silicide film (2019-11-12),
8. 10475662 - Method of forming semiconductor device (2019-11-12),
9. 10453677 - Method of forming oxide layer (2019-10-22),
10. 10340278 - Semiconductor memory device and manufacturing method thereof (2019-07-02),
11. 10312080 - Method for forming amorphous silicon multuple layer structure (2019-06-04),
12. 10276650 - Semiconductor memory device and manufacturing method thereof (2019-04-30),
13. 10262895 - Method for forming semiconductor device (2019-04-16),
14. 10249706 - Semiconductor structure (2019-04-02),
15. 10224324 - Method for manufacturing semiconductor device having gate structure with reduced threshold voltage (2019-03-05),

Title: Inventor Wei-Hsin Liu: Revolutionizing Technology in Changhua County

Introduction: Wei-Hsin Liu is a pioneering inventor based in Changhua County, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Wei-Hsin Liu holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his innovative spirit and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Wei-Hsin Liu has worked tirelessly to develop cutting-edge solutions that have had a significant impact on various industries. His dedication to pushing the boundaries of technology has earned him recognition as a leading figure in the field.

Collaborations: Wei-Hsin Liu has collaborated with top research institutions, universities, and tech companies worldwide to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: In conclusion, Wei-Hsin Liu's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors. His work serves as a testament to the power of creativity and perseverance in driving positive change in the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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