The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jan. 30, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Wei-Hsin Liu, Changhua County, TW;
Ta-Wei Chiu, Changhua County, TW;
Chia-Lung Chang, Tainan, TW;
Po-Chun Chen, Tainan, TW;
Hong-Yi Fang, Tainan, TW;
Yi-Wei Chen, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a dielectric layer includes the following steps. A substrate including a first area and a second area is provided. A plurality of patterns on the substrate of the first area and a blanket stacked structure on the substrate of the second area are formed. An organic dielectric layer covers the patterns, the blanket stacked structure and the substrate. The blanket stacked structure is patterned by serving the organic dielectric layer as a hard mask layer, thereby forming a plurality of stacked structures. The organic dielectric layer is removed. A dielectric layer blanketly covers the patterns, the stacked structures, and the substrate.