The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Apr. 12, 2018
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Inventors:

Chia-Lung Chang, Tainan, TW;

Wei-Hsin Liu, Changhua County, TW;

Po-Chun Chen, Tainan, TW;

Yi-Wei Chen, Taichung, TW;

Han-Yung Tsai, Tainan, TW;

Tzu-Chin Wu, Chiayi County, TW;

Shih-Fang Tzou, Tainan, TW;

Assignees:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01L 27/10805 (2013.01); H01L 27/10852 (2013.01); H01L 27/10897 (2013.01);
Abstract

The present invention provides a semiconductor structure comprising a substrate, a cell region defined on the substrate, a plurality of lower electrodes of the capacitor structures located in the cell region, an top support structure, contacting a top region of the lower electrode structure, and at least one middle support structure located between the substrate and the top support structure, contacting a middle region of the lower electrode structure, wherein when viewed in a top view, the top support structure and the middle support structure do not completely overlapped with each other.


Find Patent Forward Citations

Loading…