The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 19, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Po-Chun Chen, Tainan, TW;
Hsuan-Tung Chu, Tainan, TW;
Yi-Wei Chen, Taichung, TW;
Wei-Hsin Liu, Changhua County, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Chia-Lung Chang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A method of forming an isolation structure includes the following steps. A substrate having a first trench, a second trench and a third trench is provided, wherein the opening of the third trench is larger than the opening of the second trench, and the opening of the second trench is larger than the opening of the first trench. A first oxide layer is formed to conformally cover the first trench, the second trench and the third trench by an atomic layer deposition (ALD) process. A second oxide layer fills up the first trench by an in-situ steam generation (ISSG) process.