Vinod K Sangwan

Title: Innovations of Vinod K Sangwan

Introduction

Vinod K Sangwan is a prominent inventor based in Syracuse, NY, known for his significant contributions to the field of electronics and materials science. With a total of 12 patents to his name, Sangwan has made remarkable advancements in the development of novel transistor technologies and fabrication methods.

Latest Patents

One of his latest patents is titled "Tunable Gaussian Heterojunction Transistors, Fabricating Methods and Applications of Same." This invention describes a GHeT design that includes a bottom gate formed on a substrate, a first dielectric layer, and a monolayer film made of an atomically thin material. The design allows for gate tunability of Gaussian peak position, height, and width, enabling simplified circuit architectures for various spiking neuron functions in emerging neuromorphic applications. Another notable patent is the "Method for Fabricating a Memtransistor," which involves growing a polycrystalline monolayer film on a substrate and forming an electrode array on it. This method allows for the creation of channels within the polycrystalline monolayer film, enhancing the functionality of memtransistors.

Career Highlights

Sangwan has held positions at prestigious institutions such as Northwestern University and the University of Minnesota. His work has focused on advancing the understanding and application of novel materials in electronic devices, contributing to the evolution of next-generation technologies.

Collaborations

Throughout his career, Sangwan has collaborated with notable researchers, including Mark C Hersam and Deep M Jariwala. These collaborations have further enriched his research and innovation efforts.

Conclusion

Vinod K Sangwan's innovative work in the field of electronics and materials science has led to significant advancements in transistor technology and fabrication methods. His contributions continue to influence the development of emerging technologies in neuromorphic applications.