The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Feb. 15, 2018
Northwestern University, Evanston, IL (US);
Deep M. Jariwala, Evanston, IL (US);
Vinod K. Sangwan, Syracuse, NY (US);
Weichao Xu, Minneapolis, MN (US);
Hyungil Kim, Woodbury, MN (US);
Tobin J. Marks, Evanston, IL (US);
Mark C. Hersam, Wilmette, IL (US);
Northwestern University, Evanston, IL (US);
Abstract
Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.