The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Sep. 29, 2020
Applicant:
Northwestern University, Evanston, IL (US);
Inventors:
Mark C. Hersam, Wilmette, IL (US);
Vinod K. Sangwan, Evanston, IL (US);
Hong-Sub Lee, Seongnam-si, KR;
Assignee:
NORTHWESTERN UNIVERSITY, Evanston, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/68 (2006.01); G06N 3/04 (2023.01); G06N 3/08 (2023.01); G11C 13/00 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H10B 99/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/685 (2013.01); G06N 3/04 (2013.01); G06N 3/08 (2013.01); H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7394 (2013.01); H10B 99/22 (2023.02); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 29/0665 (2013.01); H01L 29/1033 (2013.01); H01L 29/4908 (2013.01);
Abstract
A memtransistor includes a top gate electrode and a bottom gate electrode; a polycrystalline monolayer film formed of an atomically thin material disposed between the top gate electrode and the bottom gate electrode; and source and drain electrodes spatial-apart formed on the polycrystalline monolayer film to define a channel in the polycrystalline monolayer film between the source and drain electrodes. The top gate electrode and the bottom gate electrode are capacitively coupled with the channel.