The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 22, 2020
Northwestern University, Evanston, IL (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Mark C. Hersam, Wilmette, IL (US);
Megan E. Beck, St. Maries, ID (US);
Vinod K. Sangwan, Evanston, IL (US);
Amit R. Trivedi, Oak Park, IL (US);
Ahish Shylendra, Chicago, IL (US);
NORTHWESTERN UNIVERSITY, Evanston, IL (US);
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, Urbana, IL (US);
Abstract
A GHeT includes a bottom gate formed on a substrate; a first dielectric layer (DL) formed on the bottom gate; a monolayer film formed of an atomically thin material on the first DL; a bottom contact (BC) formed on part of the monolayer film; a second DL formed on the BC; a top contact (TC) formed on the second DL on top of the BC; a network of CNTs formed on the TC and the monolayer film, to define an overlap region with the monolayer film; a third DL formed on the CNT network, the monolayer film and the TC; and a top gate formed on the third DL and overlapping with the overlap region. Such GHeT design allows gate tunability of Gaussian peak position, height and width that define Gaussian transfer characteristic, thereby enabling simplified circuit architectures for various spiking neuron functions for emerging neuromorphic applications.