The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Sep. 14, 2016
Northwestern University, Evanston, IL (US);
Mark C. Hersam, Wilmette, IL (US);
Deep M. Jariwala, Evanston, IL (US);
Vinod K. Sangwan, Evanston, IL (US);
NORTHWESTERN UNIVERSITY, Evanston, IL (US);
Abstract
A method of fabricating a diode includes forming a first semiconductor layer having a first portion and a second portion extending from the first portion on a substrate; forming first and second electrodes on the substrate, the first electrode extending over and being in contact with the first portion of the first semiconductor layer; forming an insulting film to cover the first electrode and the first portion of the first semiconductor layer; and forming a second semiconductor layer having a first portion and a second portion extending from the first portion on the substrate. The second portion of the second semiconductor layer overlapping with the second portion of the first semiconductor layer to define a vertically stacked heterojunction therewith. The first portion of the second semiconductor layer extending over and being in contact with the second electrode. Each of the first and second semiconductor layers includes an atomically thin semiconductor.