The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Feb. 17, 2016
Applicant:
Northwestern University, Evanston, IL (US);
Inventors:
Mark C. Hersam, Wilmette, IL (US);
Vinod K. Sangwan, Syracuse, NY (US);
Deep M. Jariwala, Evanston, IL (US);
In Soo Kim, Woodridge, IL (US);
Tobin J. Marks, Evanston, IL (US);
Lincoln J. Lauhon, Chicago, IL (US);
Assignee:
NORTHWESTERN UNIVERSITY, Evanston, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/16 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01);
Abstract
In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.