Company Filing History:

15 out of 164,108

International Business Machines Corporation

patents

1 out of 13,684

Applied Materials, Inc.

patents

Years Active: 2002-2010

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7655557 - CMOS silicide metal gate integration (2010-02-02),

2. 7635648 - Methods for fabricating dual material gate in a semiconductor device (2009-12-22),

3. 7411227 - CMOS silicide metal gate integration (2008-08-12),

4. 7326610 - Process options of forming silicided metal gates for advanced CMOS devices (2008-02-05),

5. 7056794 - FET gate structure with metal gate electrode and silicide contact (2006-06-06),

6. 7056782 - CMOS silicide metal gate integration (2006-06-06),

7. 7041538 - Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS (2006-05-09),

8. 7029966 - Process options of forming silicided metal gates for advanced CMOS devices (2006-04-18),

9. 6974736 - Method of forming FET silicide gate structures incorporating inner spacers (2005-12-13),

10. 6927117 - Method for integration of silicide contacts and silicide gate metals (2005-08-09),

11. 6921711 - Method for forming metal replacement gate of high performance (2005-07-26),

12. 6677646 - Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS (2004-01-13),

13. 6544874 - Method for forming junction on insulator (JOI) structure (2003-04-08),

14. 6528363 - Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch (2003-03-04),

15. 6506649 - Method for forming notch gate having self-aligned raised source/drain structure (2003-01-14),

Title: Victor Ku: Innovator in Semiconductor Technology

Introduction

Victor Ku is a prominent inventor based in Tarrytown, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a process for CMOS silicide metal gate integration. This invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate formed using this integration scheme has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. Additionally, he has developed methods for fabricating dual material gate structures in a semiconductor device. This method includes providing a substrate with a patterned first gate electrode and a patterned first gate dielectric layer, removing a portion of the first gate electrode to define a trench, and filling the trench to form a second gate electrode.

Career Highlights

Victor Ku has worked with notable companies in the technology sector, including IBM and Applied Materials, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Victor has collaborated with talented individuals such as An L Steegen and Cyril Cabral, Jr. These collaborations have further enriched his work and led to advancements in the field.

Conclusion

Victor Ku is a distinguished inventor whose contributions to semiconductor technology have had a lasting impact. His innovative patents and collaborations reflect his commitment to advancing the industry.

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