Victor Ku

This inventor holds 16 USPTO granted patents, primarily in CMOS Technology. Top assignees: International Business Machines Corporation, Applied Materials, Inc.. Active years: 2002-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Victor Ku. Retrieved from https://idiyas.com/inventor/victor-ku

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 50.0

Average Co-Inventor Count = 5.1

ph-index = 10

Forward Citations = 510(Granted Patents)

Location History:

Yorktown Heights, NY (US) (2005 - 2009)
Tarrytown, NY (US) (2002 - 2010)

Company Filing History:

15 out of 166,425

International Business Machines Corporation

patents

1 out of 14,502

Applied Materials, Inc.

patents

Years Active: 2002-2010

Loading Chart...

Areas of Expertise:

CMOS Silicide

Metal Gate

Dual Material Gate

Semiconductor Device

FET Gate Structure

Recessed Channel

Silicide Contacts

Notched Gates

High Performance

Insulator Structure

Sidewall Spacer

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7655557 - CMOS silicide metal gate integration (2010-02-02),

2. 7635648 - Methods for fabricating dual material gate in a semiconductor device (2009-12-22),

3. 7411227 - CMOS silicide metal gate integration (2008-08-12),

4. 7326610 - Process options of forming silicided metal gates for advanced CMOS devices (2008-02-05),

5. 7056794 - FET gate structure with metal gate electrode and silicide contact (2006-06-06),

6. 7056782 - CMOS silicide metal gate integration (2006-06-06),

7. 7041538 - Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS (2006-05-09),

8. 7029966 - Process options of forming silicided metal gates for advanced CMOS devices (2006-04-18),

9. 6974736 - Method of forming FET silicide gate structures incorporating inner spacers (2005-12-13),

10. 6927117 - Method for integration of silicide contacts and silicide gate metals (2005-08-09),

11. 6921711 - Method for forming metal replacement gate of high performance (2005-07-26),

12. 6677646 - Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS (2004-01-13),

13. 6544874 - Method for forming junction on insulator (JOI) structure (2003-04-08),

14. 6528363 - Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch (2003-03-04),

15. 6506649 - Method for forming notch gate having self-aligned raised source/drain structure (2003-01-14),

Title: Victor Ku: Innovator in Semiconductor Technology

Introduction

Victor Ku is a prominent inventor based in Tarrytown, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a process for CMOS silicide metal gate integration. This invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate formed using this integration scheme has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. Additionally, he has developed methods for fabricating dual material gate structures in a semiconductor device. This method includes providing a substrate with a patterned first gate electrode and a patterned first gate dielectric layer, removing a portion of the first gate electrode to define a trench, and filling the trench to form a second gate electrode.

Career Highlights

Victor Ku has worked with notable companies in the technology sector, including IBM and Applied Materials, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Victor has collaborated with talented individuals such as An L Steegen and Cyril Cabral, Jr. These collaborations have further enriched his work and led to advancements in the field.

Conclusion

Victor Ku is a distinguished inventor whose contributions to semiconductor technology have had a lasting impact. His innovative patents and collaborations reflect his commitment to advancing the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]